RF Power Amplifiers from 10 KHz to 1 GHz, with power levels up to 2000 Watts
- Class A Linearity
- Instantaneous Bandwidth
- Robust RF Solutions
- Solid State Reliability
- Unconditional RF Stability
- Full Service and Support
- CE Mark & RoHS Compliant
Electronics & Innovation RF Amplifier Product Chart
Please refer to our interactive product chart below for a listing of our full line of RF Power Amplifiers. To view detailed specifications on any of the amplifiers, simply click on the model number<
Electronics & Innovation, Ltd. is a world leader in providing rugged and reliable RF power. Our amplifiers cover frequencies from 10 KHz to 1 GHz, with power levels ranging from 1 - 2000 Watts.
We design and manufacture a full line of broadband power amplifiers; offering both Class A and Class AB designs. The wideband, highly linear Class A characteristics of E&I's line of solid state RF power amplifiers make them a versatile source of signal power for a variety of applications.
If our standard line doesn't match your specifications, please Contact Us to submit a Custom Request. We are well known in the industry for adapting to our customers' specific application needs.
Class A Performance
We have incorporated the design rules and thermal guidelines from the trusted ENI line of amplifiers, and have since updated the designs; incorporating modern technology and state of the art LDMoS devices. These designs enable our amplifiers to work at high power levels, into all loads, without the risk of failure; while still providing a true and faithful reproduction of the input signal.
E&I’s line of broadband RF power amplifiers are built to withstand any VSWR condition. The internal switched mode power supply is very conservatively rated, to facilitate operation over a large range of line conditions and temperatures. The forced air cooling provides for low internal temperatures; providing long term reliability. The RF power is delivered by rugged Dmos FETs, de-rated to provide excellent MTBF figures.
The majority of electronic equipment failures are due to thermo-mechanical stress. E&I designs mitigate this failure mechanism by ensuring that component mounting and placement allow for thermal cycling without stressing leads or connections. Our thermal design rules dictate that all components run at a maximum of 60% of their rated value. The Mos Fets used in the RF chain are all operated at below 40% of their rated voltage breakdown.
E&I amplifiers accurately reproduce all waveforms within their power and frequency ranges: AM. FM, SSB, pulsed and other complex modulation schemes. They are compatible with most signal generators, frequency synthesizers, sweep generators and other laboratory signal sources. Operation over the band is achieved without the need for any band switching or indeed any adjustments.
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